DocumentCode :
1418999
Title :
Characterization of crosstalk noise in submicron CMOS integrated circuits: an experimental view
Author :
Fourniols, Jean-Yves ; Roca, Miquel ; Caignet, Fabrice ; Sicard, Etienne
Author_Institution :
Dept. de Fisica, Univ. de les Illes Balears, Palma de Mallorca, Spain
Volume :
40
Issue :
3
fYear :
1998
fDate :
8/1/1998 12:00:00 AM
Firstpage :
271
Lastpage :
280
Abstract :
A way to characterize the crosstalk noise susceptibility for integrated circuits fabrication technologies is presented. A comparison between 0.7- and 0.35-μm technologies shows the increasing importance of crosstalk noise and, therefore, the need to consider this effect at the design level in submicron integrated circuits. An approach to measure the internal crosstalk generated by long metal interconnects based on using an RS latch sensor is proposed. An implementation and experimental measurements for 0.7-μm technology are reported, confirming the very high noise peak values
Keywords :
CMOS integrated circuits; crosstalk; electric noise measurement; electric sensing devices; flip-flops; integrated circuit interconnections; integrated circuit measurement; integrated circuit noise; 0.35 micron; 0.7 micron; RS latch sensor; VLSI; crosstalk measurement; crosstalk noise susceptibility; design level; experimental measurements; integrated circuits fabrication; long metal interconnects; submicron CMOS integrated circuits; CMOS integrated circuits; CMOS technology; Coupling circuits; Crosstalk; Integrated circuit interconnections; Integrated circuit measurements; Integrated circuit noise; Integrated circuit technology; Noise measurement; Sensor phenomena and characterization;
fLanguage :
English
Journal_Title :
Electromagnetic Compatibility, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9375
Type :
jour
DOI :
10.1109/15.709426
Filename :
709426
Link To Document :
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