Passivation Properties of Atomic-Layer-Deposited Hafnium and Aluminum Oxides on Si Surfaces

Author

Wang, Jun ; Mottaghian, Seyyed Sadegh ; Baroughi, Mahdi Farrokh

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., South Dakota State Univ., Brookings, SD, USA

Volume

59

Issue

2

fYear

2012

Firstpage

342

Lastpage

348

Abstract

This paper studies the chemical and field effect passivation properties of silicon surfaces by thin hafnium oxide (HfO₂) and aluminum oxide (Al₂O₃) layers grown by chemical-vapor-based atomic layer deposition method. Using a rigorous metal-oxide-semiconductor model and results from capacitance-voltage measurements, the density of fixed charges (Nf) and the density of interface traps (D_it) at the HfO₂/Si and Al₂O₃/Si interfaces were obtained. Microwave photoconductivity decay measurements were used to characterize interface recombination velocities at these interfaces.

Keywords

MIS structures; aluminium compounds; atomic layer deposition; capacitance measurement; chemical vapour deposition; elemental semiconductors; hafnium compounds; interface states; microwave measurement; passivation; photoconductivity; silicon; voltage measurement; Al₂O₃-Si; HfO₂-Si; Si; atomic-layer-deposited aluminum oxide; atomic-layer-deposited hafnium oxide; capacitance-voltage measurement; chemical passivation properties; chemical-vapor-based atomic layer deposition method; field effect passivation properties; interface recombination velocity; interface trap density; metal-oxide-semiconductor model; microwave photoconductivity decay measurement; Aluminum oxide; Capacitance; Hafnium compounds; Passivation; Silicon; Substrates; Atomic layer deposited (ALD); fixed charge density; interface trap density; surface passivation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2176943

Filename

6127908