Title :
5 V, 10 Gbit/s optical receiver module using Si-bipolar IC
Author :
Nakamura, M. ; Okayasu, M. ; Ishihara, Noboru
Author_Institution :
NTT Photonics Lab., Atsugi, Japan
fDate :
12/7/2000 12:00:00 AM
Abstract :
A 10 Gbit/s optical receiver module using a Si-bipolar IC has been developed. For low power and low cost, a pure Si-bipolar IC is used in place of a GaAs IC, which is commonly used for over 10 Gbit/s. To widen the frequency bandwidth, multifeedback techniques and a two-stage buffer configuration are used in the preamplifier IC. In addition, a differential circuit configuration is used for stable operation at high frequency. The IC was fabricated using 0.25 μm Si-bipolar technology. The module exhibits sensitivity of <-16 dBm for 10 Gbit/s data with an input dynamic range >15 dB. Small power consumption of 410 mW is achieved with the single power-supply voltage of +5 V
Keywords :
bipolar analogue integrated circuits; elemental semiconductors; feedback amplifiers; optical receivers; preamplifiers; silicon; 0.25 micron; 10 Gbit/s; 410 mW; 5 V; Si; bipolar IC; differential circuit configuration; frequency bandwidth; input dynamic range; low power electronics; multifeedback techniques; optical receiver module; power consumption; power-supply voltage; preamplifier IC; sensitivity; two-stage buffer configuration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001459
