• DocumentCode
    1419121
  • Title

    Extremely broadband InGaAsP/InP superluminescent diodes

  • Author

    Wu, Bing-Ruey ; Lin, Ching-Fuh ; Laih, Lih-Wen ; Shih, Tien-Tsorng

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    36
  • Issue
    25
  • fYear
    2000
  • fDate
    12/7/2000 12:00:00 AM
  • Firstpage
    2093
  • Lastpage
    2095
  • Abstract
    Record broadband characteristics of superluminescent diodes (SLD) are reported. Using two 87 Å In0.53Ga0.47As quantum wells and three 60 Å In0.67Ga0.33As0.72P0.28 quantum wells, the fabricated SLDs exhibit a very broad emission spectrum. The spectral width is nearly 300 nm, covering the range from 1300 to 1585.5 nm
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical transmitters; semiconductor optical amplifiers; semiconductor quantum wells; superluminescent diodes; 1300 to 1585.5 nm; III-V semiconductors; InGaAsP-InP; SLDs; broadband characteristics; emission spectrum; quantum wells; spectral width; superluminescent diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20001440
  • Filename
    891842
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1419121