Title :
Influence of Fin Width on the Total Dose Behavior of p-Channel Bulk MuGFETs
Author :
Put, Sofie ; Simoen, Eddy ; Jurczak, Malgorzata ; Van Uffelen, Marco ; Leroux, Paul ; Claeys, Cor
Author_Institution :
Dept. of Electr. Eng., Katholieke Univ. Leuven, Leuven, Belgium
fDate :
3/1/2010 12:00:00 AM
Abstract :
A first assessment of the total dose behavior of bulk p-multiple-gate field-effect transistors (MuGFETs) is reported, and special attention is given to the effect of the fin width on the radiation behavior. It was found that the effect of radiation-induced traps in the shallow trench isolation is larger when the fin width decreases. This is in contrast to the total dose behavior of SOI MuGFETs.
Keywords :
field effect transistors; gamma-rays; SOI; bulk p-multiple-gate field-effect transistors; p-channel bulk MuGFET; radiation induced traps; shallow trench isolation; total dose behavior; Bulk multiple-gate field-effect transistors (MuGFETs); gamma radiation; geometric dependence;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2039633
