Title :
Germanium on silicon pin photodiodes for the near infrared
Author :
Masini, G. ; Colace, L. ; Assanto, G. ; Luan, H.C. ; Kimerling, L.C.
Author_Institution :
Dept. of Electron. Eng., Rome Univ., Italy
fDate :
12/7/2000 12:00:00 AM
Abstract :
Novel Ge on silicon pin photodetectors have been fabricated and characterised. The devices, designed by considering the defects at the Ge/Si interface, exhibit overall performances that are among the best available, with short-circuit responsivities as high as 0.4 A/W at 1.3 μm, dark currents below 20 mA/cm2 and response times shorter than 800 ps
Keywords :
dark conductivity; elemental semiconductors; germanium; infrared detectors; optical receivers; p-i-n photodiodes; silicon; 1.3 micrometre; 800 ps; Ge-Si; Si; dark currents; near infrared; overall performances; pin photodiodes; response times; short-circuit responsivities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001448
