Progress and future challenges of silicon carbide devices for integrated circuits

Author

Kimoto, Tatsuya

Author_Institution

Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan

fYear

2014

fDate

15-17 Sept. 2014

Firstpage

1

Lastpage

8

Abstract

Silicon carbide (SiC) is an emerging wide bandgap semiconductor having superior physical properties such as high critical electric field and high saturated drift velocity. Discrete high-voltage, low-loss SiC power devices such as 600-1700 V Schottky barrier diodes and FETs (MOSFETs and JFETs) have currently been developed, and small-scale production has started. SiC is also attractive for advanced integrated circuits operating in high-temperature and radiation-hard circumstances. This paper reviews the present status, future prospects, and technological challenges of SiC devices and circuits.

Keywords

Schottky barriers; Schottky diodes; integrated circuits; power MOSFET; power semiconductor diodes; radiation hardening (electronics); silicon compounds; wide band gap semiconductors; JFET; MOSFET; Schottky barrier diodes; SiC; drift velocity; electric field; integrated circuits; power devices; radiation-hard; silicon carbide devices; voltage 600 V to 1700 V; wide band gap semiconductor; CMOS integrated circuits; Logic gates; MOSFET; Oxidation; Photonic band gap; Silicon; Silicon carbide; MOSFET; high-temperature device; power device; silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference (CICC), 2014 IEEE Proceedings of the

Conference_Location

San Jose, CA

Type

conf

DOI

10.1109/CICC.2014.6946035

Filename

6946035