Title :
Low-noise metal-insulator-semiconductor UV photodiodes based on GaN
Author :
Monroy, E. ; Calle, F. ; Pau, J.L. ; Muñoz, E. ; Omnès, F.
Author_Institution :
Dept. de Ingenieria Electron., Univ. Politecnica de Madrid, Spain
fDate :
12/7/2000 12:00:00 AM
Abstract :
Au/SiO2/GaN metal-insulator-semiconductor photodiodes have been fabricated on Si-doped GaN epitaxial layers grown on sapphire by metalorganic vapour phase epitaxy. The insertion of a thin SiO2 layer at the metal-semiconductor interface results in a significant decrease in the dark current density, and an increase in the device detectivity by more than an order of magnitude
Keywords :
III-V semiconductors; MIS devices; dark conductivity; gallium compounds; gold; photodiodes; semiconductor epitaxial layers; semiconductor growth; silicon compounds; ultraviolet detectors; vapour phase epitaxial growth; Au-SiO2-GaN; Au/SiO2/GaN; dark current density; device detectivity; metal-insulator-semiconductor UV photodiodes; metalorganic vapour phase epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001441
