DocumentCode :
1419180
Title :
On-wafer determination of intrinsic spontaneous spectrum of vertical cavity surface-emitting devices
Author :
Royo, P. ; Stanley, R.P. ; Ilegems, M. ; Streubel, K. ; Gulden, K.H.
Author_Institution :
Inst. de Micro- et Optoelectron., Ecole Polytech. Fed. de Lausanne, Switzerland
Volume :
36
Issue :
25
fYear :
2000
fDate :
12/7/2000 12:00:00 AM
Firstpage :
2106
Lastpage :
2108
Abstract :
A simple method for determining the intrinsic spontaneous spectrum of vertical cavity surface-emitting devices is presented. The procedure is based on angle-resolved measurements of the top-emission spectra and comparison with numerical simulations. It is accurate, nondestructive and easy to implement
Keywords :
light emitting diodes; semiconductor lasers; spontaneous emission; surface emitting lasers; angle-resolved measurements; intrinsic spontaneous spectrum; on-wafer determination; top-emission spectra; vertical cavity surface-emitting devices;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20001462
Filename :
891863
Link To Document :
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