Silicon carbide distributed buffer gate turn-off thyristor structure for blocking high voltages

Silicon carbide gate turn-off thyristor simulations indicate that including within the drift region an n-type layer doped 5×10¹⁶ cm^-3 and located 3 μm below the top of the drift region, improves the forward blocking state electrostatic field profile. This structure, with a 15 μm total drift region thickness and no other field termination, blocks 2211 V, against 757 V if the n-type buffer layer is left out