Title :
Math methods in transistor modeling: Condition numbers for parameter extraction
Author :
King, Firman D. ; Winson, Peter ; Snider, Arthur D. ; Dunleavy, Lawrence ; Levinson, Deborah P.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
fDate :
9/1/1998 12:00:00 AM
Abstract :
Condition numbers expressing the sensitivity of computed circuit element values to inaccuracies in S-parameter measurements are derived and evaluated for a standard small-signal MESFET model. The condition numbers shed light on the common difficulty experienced by transistor modelers in extracting accurate values for the input resistance. Other elements are also classified according to their sensitivity
Keywords :
S-parameters; Schottky gate field effect transistors; semiconductor device models; MESFET; S-parameter; circuit element; condition number; input resistance; mathematical method; parameter extraction; sensitivity; small-signal model; transistor; Electrical resistance measurement; MESFET circuits; Mathematics; Measurement standards; Nonlinear equations; Parameter estimation; Parameter extraction; Scattering parameters; Springs; Upper bound;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
