Intermodulation analysis of the collector-up InGaAs/InAlAs/InP HBT using Volterra series

Author

Bin Li ; Prasad, Sheila

Author_Institution

Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA

Volume

46

Issue

9

fYear

1998

fDate

9/1/1998 12:00:00 AM

Firstpage

1321

Lastpage

1323

Abstract

The intermodulation (IM) distortion of the collector-up InGaAs/InAlAs/InP heterojunction bipolar transistor (HBT) is analyzed using Volterra-series theory. A T-equivalent circuit is used for this analysis. The contribution and interaction of four nonlinear elements: base-emitter resistance, base-emitter capacitance, base-collector capacitance, and common base-current gain are analyzed. For the particular device under investigation, it is found that the cancellation effect is not significant and the base-emitter resistance nonlinearity dominates the third-order IM

Keywords

III-V semiconductors; Volterra series; aluminium compounds; capacitance; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; intermodulation distortion; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; IM distortion; InGaAs-InAlAs-InP; T-equivalent circuit; Volterra series; base-collector capacitance; base-emitter capacitance; base-emitter resistance nonlinearity; cancellation effect; collector-up HBT; common base-current gain; heterojunction bipolar transistor; intermodulation analysis; third-order IMD; Capacitance; Equivalent circuits; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Intermodulation distortion; Microwave devices; Polynomials; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.709481

Filename

709481