Title :
Theoretical properties of electron wave diffraction due to a transversally periodic structure in semiconductors
Author :
Furuya, Kazuhito ; Kurishima, Kenji
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
Abstract :
Electron-wave diffraction caused by a grating structure is analyzed. In the grating, potential energy varies periodically in the direction perpendicular to the electron transport. Interference between models in the grating strongly affects diffraction efficiency. As a result, both high and low efficiency, about 90% and less than 1% respectively, can be obtained depending on the electron energy. Thus, the diffraction can be switched by changing the acceleration voltage of the electron.<>
Keywords :
carrier mobility; semiconductor quantum wells; semiconductor superlattices; acceleration voltage; diffraction efficiency; electron energy; electron transport; electron wave diffraction; grating structure; potential energy; semiconductors; transversally periodic structure; Acceleration; Diffraction gratings; Electrons; Epitaxial growth; Gallium arsenide; Optical scattering; Particle scattering; Periodic structures; Potential energy; Switches;
Journal_Title :
Quantum Electronics, IEEE Journal of
