• DocumentCode
    1419423
  • Title

    Theoretical properties of electron wave diffraction due to a transversally periodic structure in semiconductors

  • Author

    Furuya, Kazuhito ; Kurishima, Kenji

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
  • Volume
    24
  • Issue
    8
  • fYear
    1988
  • Firstpage
    1652
  • Lastpage
    1658
  • Abstract
    Electron-wave diffraction caused by a grating structure is analyzed. In the grating, potential energy varies periodically in the direction perpendicular to the electron transport. Interference between models in the grating strongly affects diffraction efficiency. As a result, both high and low efficiency, about 90% and less than 1% respectively, can be obtained depending on the electron energy. Thus, the diffraction can be switched by changing the acceleration voltage of the electron.<>
  • Keywords
    carrier mobility; semiconductor quantum wells; semiconductor superlattices; acceleration voltage; diffraction efficiency; electron energy; electron transport; electron wave diffraction; grating structure; potential energy; semiconductors; transversally periodic structure; Acceleration; Diffraction gratings; Electrons; Epitaxial growth; Gallium arsenide; Optical scattering; Particle scattering; Periodic structures; Potential energy; Switches;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.7095
  • Filename
    7095