Simulation of optically injection-locked microwave oscillators using a novel SPICE model

Author

Warren, David ; Golio, J. Michael ; Johnson, Earnest

Author_Institution

Motorola Inc., Chandler, AZ, USA

Volume

36

Issue

11

fYear

1988

fDate

11/1/1988 12:00:00 AM

Firstpage

1535

Lastpage

1539

Abstract

Optical injection-locking of GaAs field-effect transistor microwave oscillators has been examined experimentally as well as by using two different optical interaction models. An additional simulation program with IC emphasis (SPICE) circuit for observing small locking ranges is also described. This first-order interaction model which utilizes a standard version of SPICE produces predictions of injection-locking range in excellent agreement with measured results. These tools allow the oscillator designer to optimize the injection-locking performance by analyzing various circuit topologies and DC bias levels

Keywords

III-V semiconductors; circuit analysis computing; field effect transistor circuits; gallium arsenide; microwave oscillators; nonlinear network analysis; solid-state microwave circuits; DC bias levels; GaAs; III-V semiconductors; SPICE model; circuit topologies; field-effect transistor; first-order interaction model; microwave oscillators; optical injection locking; simulation program; Circuit simulation; Design optimization; Gallium arsenide; Injection-locked oscillators; Integrated circuit modeling; Measurement standards; Microwave FET integrated circuits; Microwave oscillators; Predictive models; SPICE;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.8920

Filename

8920