Title :
A 350 mV, 5 GHz class-D enhanced swing quadrature VCO in 65 nm CMOS with 198.3 dBc/Hz FoM
Author :
Roy, A.G. ; Dey, Shuvashis ; Goins, Justin ; Mayaram, K. ; Fiez, Terri S.
Author_Institution :
Sch. of EECS, Oregon State Univ., Corvallis, OR, USA
Abstract :
A new enhanced swing class-D quadrature VCO which operates from a supply voltage as low as 350 mV is presented. The prototype 5 GHz VCO was fabricated in a 65 nm RF CMOS process. The measured phase noise performance is -137.1 dBc/Hz at 3 MHz offset with a power dissipation of 2.1 mW from a 0.35 V supply. The resulting figure-of-merit (FoM) is 198.3 dBc/Hz. Compared to prior CMOS LC VCO designs, the proposed enhanced swing quadrature VCO achieves the best FoM to date at the lowest supply voltage.
Keywords :
CMOS analogue integrated circuits; integrated circuit design; voltage-controlled oscillators; RF CMOS process; class D enhanced swing quadrature VCO; figure of merit; frequency 5 GHz; phase noise; power 2.1 mW; size 65 nm; voltage 350 mV; CMOS integrated circuits; Coils; MOSFET; Phase noise; Tuning; Voltage-controlled oscillators; Enhanced Swing; Low Voltage VCO; Oscillators; Quadrature VCO; Voltage controlled oscillators; class-D;
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2014 IEEE Proceedings of the
Conference_Location :
San Jose, CA
DOI :
10.1109/CICC.2014.6946061
