Title :
Ga1-yInyAs/InAsxP1-1 ( y>0.53, x>0) pin photodiodes for long wavelength regions (λ>2 μm) grown by hydride vapour phase epitaxy
Author :
Maki, K. ; Ishihara, H. ; Taguchi, Katsuhisa
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Kawasaki
fDate :
3/31/1988 12:00:00 AM
Abstract :
pin photodiodes with a 2.3 μm absorption edge are presented, using hydride vapour phase epitaxy. A Ga1-yInyAs (y=0.72) absorption layer, lattice-mismatched to the InP substrate, was grown on an InAsxP1-x (x=0-0.33) graded composition buffer layer. Typical dark current was 5 μA (0.03 A/cm2) at -6 V. Effective carrier lifetime of 0.05 μs was estimated from I/V characteristics
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; photodiodes; semiconductor epitaxial layers; semiconductor technology; vapour phase epitaxial growth; 2 to 2.3 micron; 5 muA; 50 ns; 6 V; GaInAs-InAsP photodiodes; I/V characteristics; InAsP buffer layer; InP substrates; absorption edge; absorption layer; carrier lifetime; dark current; graded composition buffer layer; hydride vapour phase epitaxy; lattice-mismatched; long wavelength photodiodes; pin photodiodes;
Journal_Title :
Electronics Letters
