Design of a Ka-band gyro-TWT for radar applications

Author

Nguyen, Khanh T. ; Calame, Jeffrey P. ; Pershing, Dean E. ; Danly, Bruce G. ; Garven, Morag ; Levush, Baruch ; Antonsen, Thomas M., Jr.

Author_Institution

Vacuum Electron. Branch, Naval Res. Lab., Washington, DC, USA

Volume

48

Issue

1

fYear

2001

fDate

1/1/2001 12:00:00 AM

Firstpage

108

Lastpage

115

Abstract

The design of a Ka-band gyrotron traveling wave tube (TWT) amplifier capable of operating over a wide range of peak powers and bandwidths is presented. The amplifier operates in the TE₁₁ mode at the fundamental cyclotron harmonic. Instantaneous bandwidths in the range of 2.5 to 3.9 GHz (at 1 dB below saturation) with corresponding peak powers between 92.2 and 57.9 kW can be achieved by simply adjusting the mod-anode voltage of the electron gun. The corresponding gains range from 57.1 to 36.0 dB. The design performance is obtained with a high quality, 6 A, 70 kV electron beam generated with a double-anode magnetron injection gun. This wide range performance capability in the design is achieved via the use of the distributed loss approach in the interacting circuit, which also guarantees zero-drive stability. A diffractive loading scheme is employed in the lossy section of the circuit to ensure high average power operation of the amplifier

Keywords

electron guns; gyrotrons; radar equipment; travelling wave amplifiers; travelling wave tubes; 2.5 to 3.9 GHz; 57.1 to 36 dB; 6 A; 70 kV; 92.2 to 57.9 kW; Ka-band gyro-TWT; TE₁₁ mode; design performance; diffractive loading scheme; distributed loss approach; double-anode magnetron injection gun; electron gun; fundamental cyclotron harmonic; gain range; high average power operation; high quality electron beam; instantaneous bandwidths; interacting circuit; lossy section; mod-anode voltage; peak powers; radar applications; traveling wave tube amplifier; wide range performance capability; zero-drive stability; Bandwidth; Circuits; Cyclotrons; Electron beams; Gyrotrons; Power amplifiers; Radar applications; Saturation magnetization; Tellurium; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.892176

Filename

892176