• DocumentCode
    1419785
  • Title

    Silicide application on gated single-crystal, polycrystalline and amorphous silicon FEAs. II. Co silicide

  • Author

    Lee, Jong Duk ; Shim, Byung Chang ; Park, Byung-Gook

  • Author_Institution
    Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
  • Volume
    48
  • Issue
    1
  • fYear
    2001
  • fDate
    1/1/2001 12:00:00 AM
  • Firstpage
    155
  • Lastpage
    160
  • Abstract
    For pt. I see ibid., vol.48, no.1, p.149-54 (Jan. 2001). For enhancement and stabilization of electron emission, Co silicides were formed from Co, Co/Ti and Ti/Co layers on silicon FEAs. Since Ti prevents oxygen adsorption on the Co film during silicidation, uniform and smooth Co silicide layers can be obtained by depositing Co first and then Ti on silicon tips, followed by rapid annealing. Among Co silicide FEAs, Co silicide formed from Ti/Co bi-layers shows the lowest leakage current, the highest failure voltage over 152 V and the largest anode current over 1 mA at the gate voltage of 150 V. Compared with silicon field emitters, the silicide FEAs formed from Ti/Co layers exhibited a significant improvement in maximum emission current, emission current fluctuation and stability, and failure voltage
  • Keywords
    cobalt compounds; current fluctuations; electron field emission; elemental semiconductors; leakage currents; rapid thermal annealing; silicon; vacuum microelectronics; 1 mA; 150 V; 152 V; Co layers; Co silicides; Co/Ti bilayers; CoSi; O2 adsorption prevention; Si; Si-Co; Si-Co-Ti; Ti/Co bilayers; amorphous silicon FEAs; anode current; electron emission enhancement; electron emission stabilization; emission current fluctuation; failure voltage; gate voltage; leakage current; maximum emission current; polycrystalline silicon FEAs; rapid annealing; silicidation; silicide FEAs; single-crystal silicon FEAs; Annealing; Anodes; Electron emission; Fluctuations; Leakage current; Semiconductor films; Silicidation; Silicides; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.892183
  • Filename
    892183