Title :
Silicide application on gated single-crystal, polycrystalline and amorphous silicon FEAs. II. Co silicide
Author :
Lee, Jong Duk ; Shim, Byung Chang ; Park, Byung-Gook
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
fDate :
1/1/2001 12:00:00 AM
Abstract :
For pt. I see ibid., vol.48, no.1, p.149-54 (Jan. 2001). For enhancement and stabilization of electron emission, Co silicides were formed from Co, Co/Ti and Ti/Co layers on silicon FEAs. Since Ti prevents oxygen adsorption on the Co film during silicidation, uniform and smooth Co silicide layers can be obtained by depositing Co first and then Ti on silicon tips, followed by rapid annealing. Among Co silicide FEAs, Co silicide formed from Ti/Co bi-layers shows the lowest leakage current, the highest failure voltage over 152 V and the largest anode current over 1 mA at the gate voltage of 150 V. Compared with silicon field emitters, the silicide FEAs formed from Ti/Co layers exhibited a significant improvement in maximum emission current, emission current fluctuation and stability, and failure voltage
Keywords :
cobalt compounds; current fluctuations; electron field emission; elemental semiconductors; leakage currents; rapid thermal annealing; silicon; vacuum microelectronics; 1 mA; 150 V; 152 V; Co layers; Co silicides; Co/Ti bilayers; CoSi; O2 adsorption prevention; Si; Si-Co; Si-Co-Ti; Ti/Co bilayers; amorphous silicon FEAs; anode current; electron emission enhancement; electron emission stabilization; emission current fluctuation; failure voltage; gate voltage; leakage current; maximum emission current; polycrystalline silicon FEAs; rapid annealing; silicidation; silicide FEAs; single-crystal silicon FEAs; Annealing; Anodes; Electron emission; Fluctuations; Leakage current; Semiconductor films; Silicidation; Silicides; Silicon; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
