DocumentCode
141980
Title
Dark current in standard CMOS pinned photodiodes for Time-of-Flight sensors
Author
Illade-Quinteiro, J. ; Brea, V.M. ; Lopez, Pierre ; Blanco-Filgueira, Beatriz ; Cabello, D. ; Domenech-Asensi, G.
Author_Institution
Centro de Investig. en Tecnoloxias da Informacion (CITIUS), Univ. of Santiago de Compostela, Santiago de Compostela, Spain
fYear
2014
fDate
18-18 April 2014
Firstpage
1
Lastpage
4
Abstract
This paper deals with the optimal design of pinned photodiodes on standard CMOS technologies for Time-of-Flight sensors with the twofold objective of minimizing the dark current while ensuring an optimal charge transfer. The results are verified through CAD simulations with realistic doping profiles for a standard 0.18 μm CMOS technology. To the best of our knowledge, no similar analysis have been previously reported in the literature.
Keywords
CMOS integrated circuits; charge exchange; doping profiles; leakage currents; p-i-n photodiodes; CAD simulations; CMOS pinned photodiodes; charge transfer; dark current; doping profiles; size 0.18 mum; time-of-flight sensors; CMOS integrated circuits; CMOS technology; Dark current; Photodiodes; Semiconductor device modeling; Semiconductor process modeling; Standards;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics And Electron Devices (WMED), 2014 IEEE Workshop On
Conference_Location
Boise, ID
ISSN
1947-3834
Print_ISBN
978-1-4799-2222-2
Type
conf
DOI
10.1109/WMED.2014.6818726
Filename
6818726
Link To Document