• DocumentCode
    1419836
  • Title

    Development of a low voltage power booster TWT for a Q-band MMPM

  • Author

    Kennedy, John ; Colombo, Carl

  • Author_Institution
    Electron Devices Div., Litton Syst. Inc., San Carlos, CA, USA
  • Volume
    48
  • Issue
    1
  • fYear
    2001
  • fDate
    1/1/2001 12:00:00 AM
  • Firstpage
    180
  • Lastpage
    182
  • Abstract
    Compact millimeter wave amplifiers with output powers ranging from around 20 to 100 W are required for a number of important military and commercial applications. This paper describes the design of a miniature, low voltage, vacuum power booster TWT for a Q-band (40-45 GHz) millimeter wave power module (MMPM). At a design voltage of 7.7 kV and a maximum current of 120 mA, an output power goal of greater than 40 W of CW rf output power has been established for the Q-band TWT. Beam confinement is provided using an optimized samarium cobalt PPM stack. Circuit losses at millimeter wavelengths are minimized using a novel wire-wrapped, T-shaped BeO rod support structure. Output power is transmitted through a 0.051 cm, thick alumina ceramic output window. High overall device efficiency is achieved through the use of a 3 stage depressed collector. A recently completed engineering prototype produced 51 W of CW power at 41 GHz. Experimental overall device efficiency was 34.5%. These results will be described, as well as ongoing work to further improve overall device performance
  • Keywords
    electron guns; electron tube testing; millimetre wave power amplifiers; permanent magnets; travelling wave amplifiers; 0.051 cm; 120 mA; 3 stage depressed collector; 34.5 percent; 40 to 45 GHz; 41 GHz; 51 W; 7.7 kV; Al2O3; BeO; CW rf output power; Q-band MMPM; Sm-Co; alumina ceramic output window; beam confinement; compact millimeter wave amplifiers; design voltage; electron gun design; helix TWT; low voltage power booster TWT; maximum current; millimeter wave power module; mm-wave circuit losses; optimized Sm-Co PPM stack; output power goal; output power range; overall device efficiency; wire-wrapped T-shaped BeO rod support structure; Ceramics; Cobalt; Design engineering; Low voltage; Millimeter wave circuits; Multichip modules; Power amplifiers; Power engineering and energy; Power generation; Samarium;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.892189
  • Filename
    892189