Title :
Efficient modeling of the optical properties of MQW modulators on InGaAsP with absorption edge merging
Author :
Ahland, Andreas ; Schulz, Dirk ; Voges, Edgar
Author_Institution :
Dortmund Univ., Germany
fDate :
9/1/1998 12:00:00 AM
Abstract :
The optical properties of quantum wells on GaxIn1-xAs1-yPy are investigated. The dielectric function ε(ω) is calculated with a density matrix formalism valid for excitonic transitions as well as for the interband absorption including band mixing. With two simple approximations, the required number of overlap integrals is greatly reduced, allowing a fast and efficient exciton calculation. The calculated results are compared with measurements at 77 K and at a room temperature of 300 K. Furthermore, we present a field-induced heavy and light hole absorption merging for a GaxIn1-xAs1-yPy-based modulator for the first time. It can he operated at a wavelength λ=1.55 μm, showing a very large absorption change and a small negative chirp factor, which is recommended for a low bit error rate
Keywords :
III-V semiconductors; approximation theory; dielectric function; electro-optical modulation; excitons; gallium arsenide; gallium compounds; indium compounds; light absorption; semiconductor device models; semiconductor quantum wells; 1.55 mum; 300 K; 77 K; GaxIn1-xAs1-yPy; GaxIn1-xAs1-yPy-based modulator; InGaAsP; MQW modulators; absorption edge merging; band mixing; density matrix formalism; dielectric function; efficient exciton calculation; excitonic transition; field-induced heavy hole absorption; interband absorption; light hole absorption; low bit error rate; optical properties; overlap integrals; quantum wells; room temperature; simple approximations; small negative chirp factor; very large absorption change; Absorption; Chirp modulation; Dielectric measurements; Excitons; Merging; Optical mixing; Optical modulation; Quantum well devices; Temperature; Time measurement;
Journal_Title :
Quantum Electronics, IEEE Journal of
