Title :
Optimizing and engineering EuSe-PbSe0.78Te0.22-EuSe multiple-quantum-well laser structures
Author :
Khodr, M.F. ; McCann, P.J. ; Mason, B.A.
Author_Institution :
Hallib, Fort Worth, TX, USA
fDate :
9/1/1998 12:00:00 AM
Abstract :
In this paper, we present a simulation model to optimize and engineer EuSe-PbSe0.78Te0.22-EuSe single-quantum-well lasers. We solve for the effects of strong nonparabolicity of the bands on the optimization process. The optical energy confined in the active region is also calculated for multiple-quantum-well (MQW) lasers. The modal gain-current density relation for this structure is obtained for parabolic band and nonparabolic band systems. The relationships between threshold current, cavity length, and mirror reflectivity are obtained for the MQW structure assuming parabolic and nonparabolic band systems. Finally, in addition to a 20% shift in the output lasing energy, it is concluded that the effects of nonparabolicity on the threshold current values are significant for short-cavity lasers and decrease with an increase in the cavity length
Keywords :
IV-VI semiconductors; europium compounds; laser cavity resonators; laser mirrors; lead compounds; optimisation; quantum well lasers; reflectivity; semiconductor quantum wells; EuSe-PbSe0.78Te0.22-EuSe; EuSe-PbSe0.78Te0.22-EuSe multiple-quantum-well laser structures; EuSe-PbSe0.78Te0.22-EuSe single-quantum-well lasers; MQW lasers; MQW structure; active region; cavity length; mirror reflectivity; modal gain-current density relation; nonparabolic band; nonparabolic band systems; optical energy confinement; optimization process; output lasing energy; parabolic band; parabolic band systems; short-cavity lasers; simulation model; strong nonparabolicity; threshold current; threshold current values; Carrier confinement; Laser modes; Lead; Optical bistability; Optical devices; Optical materials; Quantum well devices; Semiconductor lasers; Semiconductor materials; Tellurium;
Journal_Title :
Quantum Electronics, IEEE Journal of
