DocumentCode :
1419914
Title :
Resonant tunneling in quantum cascade lasers
Author :
Sirtori, Carlo ; Capasso, Federico ; Faist, Jérôme ; Hutchinson, Albert L. ; Sivco, Deborah L. ; Cho, Alfred Y.
Author_Institution :
Lab. Central de Recherches, Thomson-CSF, Orsay, France
Volume :
34
Issue :
9
fYear :
1998
fDate :
9/1/1998 12:00:00 AM
Firstpage :
1722
Lastpage :
1729
Abstract :
Experimental evidence that in quantum cascade lasers electron injection into the active region is controlled by resonant tunneling between two-dimensional subbands is discussed. A quantitative analysis is carried out using an equation for the current density based on a tight-binding approximation. Electron injection into the active region is optimized when the current density is limited by the lifetime of the excited state of the laser transition. In this regime, quasi-equilibrium is reached between the population of the injector ground state and that of the excited state of the laser transition characterized by a common quasi-Fermi level. The design of the injector depends on the selected laser active region; in particular, the choice of physical parameters, such as doping concentration and injection barrier thicknesses, is in general different for vertical or diagonal transition lasers. The paper concludes with an investigation of the transport properties at threshold and its dependence on stimulated emission; a relationship between the differential resistance above threshold and the value of the slope efficiency is deduced
Keywords :
current density; excited states; laser theory; quantum well lasers; semiconductor device models; stimulated emission; tunnelling; above threshold; active region; common quasi-Fermi level; current density; differential resistance; doping concentration; electron injection; injection barrier thicknesses; injector ground state; laser transition excited state lifetime; physical parameters; quantitative analysis; quantum cascade laser resonant tunnelling; quasi-equilibrium; slope efficiency; stimulated emission; tight-binding approximation; transport properties; two-dimensional subbands; Current density; Electrons; Equations; Laser excitation; Laser theory; Laser transitions; Optical control; Quantum cascade lasers; Resonant tunneling devices; Stationary state;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.709589
Filename :
709589
Link To Document :
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