Title :
Material and ultrafast optoelectronic properties of furnace-annealed arsenic-ion-implanted GaAs
Author :
Lin, Gong-Ru ; Chen, Wen-Chung ; Chang, C.-S. ; Chao, Shyh-Chin ; Wu, Kaung-Hsiung ; Hsu, T.M. ; Lee, W.C. ; Pan, Ci-Ling
Author_Institution :
Inst. of Electro-Opt. Eng., Tatung Inst. of Technol., Taipei, Taiwan
fDate :
9/1/1998 12:00:00 AM
Abstract :
Structural, electrical, and ultrafast optical properties of furnace-annealed arsenic-ion-implanted GaAs (GaAs:As+) has been investigated for its applications in ultrafast optoelectronics. From these studies, we determine that GaAs substrates implanted with 200-keV arsenic ions at 1010 ions/cm2 and furnace-annealed at 500°C-600°C would have recovered its crystallinity, be highly resistive, and exhibit picosecond photo-excited carrier lifetimes. The duration of the electrical pulses generated by photoconductive switches (PCSs) fabricated on the optimized material was ≈4 ps. The risetime (10%-90%) and l/e falltime were, respectively, ≈2 and 3 ps. These results were measurement-system limited. We estimated the actual response to be ≈2 ps, consistent with a photo-excited carrier lifetime of ≈1.8 ps. The peak responsivity was ⩾4×10-3 A/W. The dark current for the GaAs:As+ PCS biased at 40 V was as low as 5 nA. The breakdown field was higher than 150 kV/cm. These characteristics are comparable to those of state-of-the-art photoconductors such as LT-GaAs
Keywords :
annealing; arsenic; carrier lifetime; dark conductivity; gallium arsenide; high-speed optical techniques; ion implantation; optical materials; photoconducting switches; 2 ps; 3 ps; 40 V; 5 nA; 500 to 600 C; GaAs substrates; GaAs:As; GaAs:As+; LT-GaAs; breakdown field; crystallinity; electrical properties; electrical pulses; furnace-annealed arsenic-ion-implanted GaAs; keV arsenic ions; l/e falltime; measurement-system limited; optimized material; peak responsivity; photo-excited carrier lifetime; photoconductive switches; picosecond photo-excited carrier lifetimes; risetime; state-of-the-art photoconductors; structural properties; ultrafast optical properties; ultrafast optoelectronic properties; ultrafast optoelectronics; Charge carrier lifetime; Crystalline materials; Crystallization; Gallium arsenide; Optical materials; Particle beam optics; Photoconducting materials; Pulse generation; Switches; Ultrafast optics;
Journal_Title :
Quantum Electronics, IEEE Journal of
