DC and RF characteristics of doped multichannel AlAs/sub 0.56/Sb/sub 0.44//In/sub 0.53/Ga/sub 0.47/As field effect transistors with variable gate-lengths

Author

Dumka, D.C. ; Cueva, G. ; Hier, H. ; Aina, O.A. ; Adesida, I.

Author_Institution

Microelectron. Lab., Illinois Univ., Urbana, IL, USA

Volume

22

Issue

1

fYear

2001

Firstpage

5

Lastpage

7

Abstract

Depletion-mode doped-channel field effect transistors (DCFETs) using a AlAs/sub 0.56/Sb/sub 0.44//In/sub 0.53/Ga/sub 0.47/As heterostructure with multiple channels grown by molecular beam epitaxy (MBE) on an InP substrate are presented. Devices with gate lengths ranging from 0.2 μm to 1.0 μm have been fabricated. Three doped In/sub 0.53/Ga/sub 0.47/As channels separated by undoped AlAs/sub 0.56/Sb/sub 0.44/ layers are used for the devices. The devices exhibit unity current gain cut-off frequencies typically between 18 GHz and 73 GHz and corresponding maximum oscillation frequencies typically between 60 GHz and 160 GHz. The multiple channel approach results in wide linearity of dc and RF performance of the device.

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; semiconductor epitaxial layers; 0.2 to 1.0 mum; AlAs/sub 0.56/Sb/sub 0.44/-In/sub 0.53/Ga/sub 0.47/As; DC characteristics; InP; InP substrate; MBE; RF characteristics; current gain cut-off frequencies; doped multichannel FET; gate-length; Conducting materials; Cutoff frequency; FETs; HEMTs; Indium gallium arsenide; Indium phosphide; Linearity; Molecular beam epitaxial growth; Radio frequency; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.892426

Filename

892426