Thermally isolated MOSFET for gas sensing application

Author

Briand, Danick ; Sundgren, Hans ; Van der Schoot, Bart ; Lundström, Ingemar ; De Rooij, Nicolaas F.

Author_Institution

Inst. of Microtechnol., Neuchatel Univ., Switzerland

Volume

22

Issue

1

fYear

2001

Firstpage

11

Lastpage

13

Abstract

This work reports on thermally isolated electronic components for gas sensing applications. The device is composed of an array of 4 MOSFETs, a diode and a semiconductor resistor integrated on a micro-hotplate, which is fabricated using bulk micromachining of silicon. The thermal efficiency of the device is 2/spl deg/C/mW with a thermal constant less than 100 ms. Holes are made in the passivation film over the gates of the MOSFET and gas sensitive films deposited on top of the gate insulator. The low thermal mass device realized allows new modes of operation for MOSFET gas sensors such as a combination of the field and thermal effects and a pulsed temperature mode of operation.

Keywords

MOSFET; gas sensors; isolation technology; micromachining; bulk micromachining; gas sensing; low thermal mass device; micro-hotplate; pulsed temperature mode; semiconductor resistor; thermal constant; thermal efficiency; thermally isolated MOSFET; thermally isolated electronic components; Electronic components; Gas detectors; Gas insulation; MOSFET circuits; Micromachining; Passivation; Resistors; Semiconductor diodes; Semiconductor films; Silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.892428

Filename

892428