Title :
A proposed single grain-boundary thin-film transistor
Author :
Oh, Chang-Ho ; Matsumura, Masakiyo
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Abstract :
A new Si thin-film transistor (TFT) has been proposed where only one grain-boundary exists at the center of channel, and the source and drain are within single grains with good crystallinity. The device fabricated by an excimer-laser crystallization method at the maximum temperature of 500/spl deg/C, had the on-off current ratio /spl cong/10/sup 6/, the field-effect mobility /spl cong/330 cm/sup 2//Vs and the subthreshold swing /spl cong/1.1 V/dec, respectively, For the device processed at 800/spl deg/C, they are >10/sup 6/, >450 cm/sup 2//Vs and /spl cong/0.51 V/dec, respectively.
Keywords :
electron mobility; elemental semiconductors; grain boundaries; laser beam annealing; silicon; thin film transistors; 500 C; Si; excimer-laser crystallization method; field-effect mobility; maximum temperature; on-off current ratio; single grain-boundary thin-film transistor; subthreshold swing; Annealing; Crystallization; Gradient methods; Grain boundaries; Proposals; Semiconductor films; Silicon compounds; Temperature; Thin film transistors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
