Title :
To suppress photoexcited current of hydrogenated polysilicon TFTs with low temperature oxidation of polychannel
Author :
Yaung, D.N. ; Fang, Y.K. ; Chen, C.H. ; Hung, C.C. ; Tsao, F.C. ; Wuu, S.G. ; Liang, M.S.
Author_Institution :
VLSI Technol. Lab., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
In this letter, a short time low temperature oxidation of poly-Si channel has been studied to suppress the photoexcited current of the hydrogenated poly-Si TFTs. The effect of the treatment, which contains different-time oxidation and different-time post-hydrogenation, on the dark-current and photocurrent of poly-Si TFTs under off state were investigated in detail. An optimal combination of both technologies has been proposed according to the investigation. The poly-Si TFTs treated with the optimal process can be operated well under a high illumination environment.
Keywords :
dark conductivity; elemental semiconductors; hydrogen; oxidation; photoconductivity; silicon; thin film transistors; Si:H; dark-current; different-time oxidation; different-time post-hydrogenation; hydrogenated polysilicon TFTs; low temperature oxidation; photocurrent; photoexcited current suppression; polychannel; Circuits; Councils; Flat panel displays; Grain boundaries; Leakage current; Lighting; Oxidation; Photoconductivity; Silicon compounds; Temperature;
Journal_Title :
Electron Device Letters, IEEE
