Title :
Schottky junction transistor-micropower circuits at GHz frequencies
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
Numerical simulations of a new micropower transistor configuration are presented. The transistor is a majority carrier device that operates as a current-controlled current-source. Results from a 0.5 μm gate length device indicate a cutoff frequency in the GHz range, for drain currents appropriate to micropower circuit applications.
Keywords :
Schottky barriers; power MESFET; 0.5 /spl mu/m gate length device; CoSi/sub 2/-Si-SiO/sub 2/-Si; GHz frequencies; Schottky junction transistor-micropower circuits; current-controlled current-source; cutoff frequency; drain currents; majority carrier device; micropower circuit applications; micropower transistor configuration; Circuits; Cutoff frequency; Doping; MOSFETs; Pacemakers; Retina; Schottky barriers; Semiconductor device modeling; Transistors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
