• DocumentCode
    1420152
  • Title

    A new metal-to-metal antifuse with amorphous carbon

  • Author

    Liu, S. ; Lamp, D. ; Gangopadhyay, S. ; Sreenivas, G. ; Ang, S.S. ; Naseem, H.A.

  • Author_Institution
    Dept. of Phys., Texas Tech. Univ., Lubbock, TX, USA
  • Volume
    19
  • Issue
    9
  • fYear
    1998
  • Firstpage
    317
  • Lastpage
    319
  • Abstract
    We report the development of a new metal-to-metal antifuse with amorphous carbon as the dielectric. Amorphous carbon antifuses have several characteristics making them superior to amorphous silicon antifuses, including lower values of OFF-state leakage current, ON-state resistance, dielectric constant, and breakdown voltage. Most importantly, amorphous carbon antifuses do not show ON-OFF switching, which is observed in amorphous silicon antifuses. A new model is proposed to explain the breakdown mechanism and ON-state reliability of amorphous carbon antifuses.
  • Keywords
    MIM devices; amorphous state; carbon; electric fuses; C; amorphous carbon dielectric; breakdown voltage; dielectric constant; metal-to-metal antifuse; model; off-state leakage current; on-off switching; on-state resistance; reliability; Amorphous materials; Amorphous silicon; CMOS logic circuits; Dielectric substrates; Electrodes; Field programmable gate arrays; Functional programming; Lamps; Leakage current; Logic programming;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.709626
  • Filename
    709626