DocumentCode :
1420152
Title :
A new metal-to-metal antifuse with amorphous carbon
Author :
Liu, S. ; Lamp, D. ; Gangopadhyay, S. ; Sreenivas, G. ; Ang, S.S. ; Naseem, H.A.
Author_Institution :
Dept. of Phys., Texas Tech. Univ., Lubbock, TX, USA
Volume :
19
Issue :
9
fYear :
1998
Firstpage :
317
Lastpage :
319
Abstract :
We report the development of a new metal-to-metal antifuse with amorphous carbon as the dielectric. Amorphous carbon antifuses have several characteristics making them superior to amorphous silicon antifuses, including lower values of OFF-state leakage current, ON-state resistance, dielectric constant, and breakdown voltage. Most importantly, amorphous carbon antifuses do not show ON-OFF switching, which is observed in amorphous silicon antifuses. A new model is proposed to explain the breakdown mechanism and ON-state reliability of amorphous carbon antifuses.
Keywords :
MIM devices; amorphous state; carbon; electric fuses; C; amorphous carbon dielectric; breakdown voltage; dielectric constant; metal-to-metal antifuse; model; off-state leakage current; on-off switching; on-state resistance; reliability; Amorphous materials; Amorphous silicon; CMOS logic circuits; Dielectric substrates; Electrodes; Field programmable gate arrays; Functional programming; Lamps; Leakage current; Logic programming;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.709626
Filename :
709626
Link To Document :
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