Title :
Enhanced hot-carrier induced degradation in shallow trench isolated narrow channel PMOSFET´s
Author :
Chen, Jone F. ; Ishimaru, Kazunari ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Enhanced hot-carrier induced current degradation in narrow channel PMOSFET´s with shallow trench isolation structure is observed. This phenomenon is not due to the increase in gate current, but the result of the increase in the electron trapping efficiency of the gate oxide. Mechanical stress may he responsible for the enhanced electron trapping efficiency.
Keywords :
MOSFET; electron traps; hot carriers; isolation technology; semiconductor device reliability; electron trapping efficiency; gate current; gate oxide; hot-carrier induced degradation; narrow channel PMOSFET; shallow trench isolation; Acceleration; CMOS technology; Current measurement; Degradation; Electron traps; Hot carriers; Isolation technology; MOSFET circuits; Performance evaluation; Stress;
Journal_Title :
Electron Device Letters, IEEE
