• DocumentCode
    1420183
  • Title

    Enhanced hot-carrier induced degradation in shallow trench isolated narrow channel PMOSFET´s

  • Author

    Chen, Jone F. ; Ishimaru, Kazunari ; Hu, Chenming

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
  • Volume
    19
  • Issue
    9
  • fYear
    1998
  • Firstpage
    332
  • Lastpage
    334
  • Abstract
    Enhanced hot-carrier induced current degradation in narrow channel PMOSFET´s with shallow trench isolation structure is observed. This phenomenon is not due to the increase in gate current, but the result of the increase in the electron trapping efficiency of the gate oxide. Mechanical stress may he responsible for the enhanced electron trapping efficiency.
  • Keywords
    MOSFET; electron traps; hot carriers; isolation technology; semiconductor device reliability; electron trapping efficiency; gate current; gate oxide; hot-carrier induced degradation; narrow channel PMOSFET; shallow trench isolation; Acceleration; CMOS technology; Current measurement; Degradation; Electron traps; Hot carriers; Isolation technology; MOSFET circuits; Performance evaluation; Stress;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.709632
  • Filename
    709632
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1420183