Title :
InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage
Author :
Zaknoune, Mohammed ; Bonte, B. ; Gaquiere, C. ; Cordier, Y. ; Druelle, Y. ; Theron, Didier ; Crosnier, Y.
Author_Institution :
Dept. Hyperfrequences et Semicond., CNRS, Villeneuve D´Ascq, France
Abstract :
An In/sub 0.3/Al/sub 0.7/As/In/sub 0.3/Ga/sub 0.7/As metamorphic power high electron mobility transistor (HEMT) grown on GaAs has been developed. This structure with 30% indium content presents several advantages over P-HEMT on GaAs and LM-HEMT on InP. A 0.15-μm gate length device with a single /spl delta/ doping exhibits a state-of-the-art current gain cut-off frequency FT value of 125 GHz at V/sub ds/=1.5 V, an extrinsic transconductance of 650 mS/mm and a current density of 750 mA/mm associated to a high breakdown voltage of -13 V, power measurements performed at 60 GHz demonstrate a maximum output power of 240 mW/mm with 6.4-dB power gain and a power added efficiency (PAE) of 25%. These are the first power results ever reported for any metamorphic HEMT.
Keywords :
III-V semiconductors; aluminium compounds; current density; doping profiles; electric breakdown; gallium arsenide; indium compounds; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; -13 V; 0.15 micron; 1.5 V; 125 GHz; 25 percent; 6.4 dB; 60 GHz; 650 mS/mm; EHF; GaAs; GaAs substrate; In/sub 0.3/Al/sub 0.7/As-In/sub 0.3/Ga/sub 0.7/As; MM-wave device; high breakdown voltage; high current density; metamorphic HEMT; power high electron mobility transistor; single /spl delta/ doping; Current density; Doping; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Performance gain; mHEMTs;
Journal_Title :
Electron Device Letters, IEEE
