DocumentCode
1420421
Title
A Phase Change Memory as a Secure Main Memory
Author
Seznec, André
Author_Institution
Centre de Rech. INRIA Rennes Bretagne-Atlantique, Rennes, France
Volume
9
Issue
1
fYear
2010
Firstpage
5
Lastpage
8
Abstract
Phase change memory (PCM) technology appears as more scalable than DRAM technology. As PCM exhibits access time slightly longer but in the same range as DRAMs, several recent studies have proposed to use PCMs for designing main memory systems. Unfortunately PCM technology suffers from a limited write endurance; typically each memory cell can be only be written a large but still limited number of times (107 to 109 writes are reported for current technology). Till now, research proposals have essentially focused their attention on designing memory systems that will survive to the average behavior of conventional applications.However PCM memory systems should be designed to survive worst-case applications, i.e., malicious attacks targeting the physical destruction of the memory through overwriting a limited number of memory cells. In this paper, we propose the design of a secure PCM-based main memory that would by construction survive to overwrite attacks.
Keywords
phase change memories; DRAM technology; PCM memory systems; memory cells; phase change memory; secure PCM-based main memory; Memory Structures; Semiconductor Memories;
fLanguage
English
Journal_Title
Computer Architecture Letters
Publisher
ieee
ISSN
1556-6056
Type
jour
DOI
10.1109/L-CA.2010.2
Filename
5415929
Link To Document