Title :
Modulation of absorption in field-effect quantum well structures
Author :
Chemla, D.S. ; Bar-Joseph, I. ; Kue, J.M. ; Chang, T.Y. ; Klingshirn, C. ; Livescu, Gabriela ; Miller, David A B
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
8/1/1988 12:00:00 AM
Abstract :
Experimental and theoretical investigations of the absorption in a single-modulation-doped quantum well (QW) used as conducting channel of a field-effect transistor are presented. By applying a voltage to the gate, the electron concentration can be varied between 0 and ~1012 cm-2. The continuous transition can be optically followed from an undoped to a highly doped QW. Effects of band filling are observed, along with renormalized effects at the first subband edge and electrostatic effects at the higher ones. It is shown that optical techniques can give in situ information on the electron density and temperature as well as on the electrostatic fields inside field-effect structures
Keywords :
carrier density; high electron mobility transistors; semiconductor quantum wells; visible spectra of inorganic solids; absorption modulation; band filling; conducting channel; continuous transition; electron concentration; electron density; electron temperature; electrostatic effects; electrostatic fields; field-effect quantum well structures; field-effect transistor; highly doped QW; optical techniques; renormalized effects; single-modulation-doped quantum well; subband edge; undoped QW; Absorption; Electron optics; Electrostatics; Epitaxial layers; Excitons; High speed optical techniques; Nonlinear optics; Optical modulation; Optical refraction; Optical variables control;
Journal_Title :
Quantum Electronics, IEEE Journal of
