Low dark current GaN avalanche photodiodes

Author

Yang, B. ; Li, T. ; Heng, K. ; Collins, C. ; Wang, S. ; Carrano, J.C. ; Dupuis, R.D. ; Campbell, J.C. ; Schurman, M.J. ; Ferguson, I.T.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

36

Issue

12

fYear

2000

Firstpage

1389

Lastpage

1391

Abstract

We report the fabrication and characterization of GaN avalanche photodiodes grown on sapphire by metalorganic chemical vapor deposition. Current-voltage characteristics indicate a gain higher than 23. The photoresponse is independent of the bias voltage prior to the onset of avalanche gain which occurs at an electric field of /spl sim/4 MV/cm. Near avalanche breakdown, the dark current of a 30-/spl mu/m diameter device is less than 100 pA. The breakdown shows a positive temperature coefficient of 0.03 V/K that is characteristic of avalanche breakdown.

Keywords

III-V semiconductors; MOCVD; avalanche breakdown; avalanche photodiodes; dark conductivity; gallium compounds; optical fabrication; 100 pA; 30 mum; Al/sub 2/O/sub 3/; GaN; GaN avalanche photodiodes; avalanche breakdown; avalanche gain; bias voltage; characterization; current-voltage characteristics; dark current; electric field; fabrication; gain; low dark current avalanche photodiodes; metalorganic chemical vapor deposition; near avalanche breakdown; photoresponse; positive temperature coefficient; sapphire; Avalanche breakdown; Avalanche photodiodes; Chemical vapor deposition; Dark current; Electric breakdown; Gallium nitride; Photoconductivity; Plasma measurements; Substrates; Voltage;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.892557

Filename

892557