Title :
Electrical properties of devices fabricated on laser-etched silicon
Author :
Treyz, G.V. ; Osgood, Richard M., Jr.
Author_Institution :
Microelectron. Sci. Lab., Columbia Univ., New York, NY, USA
fDate :
5/1/1988 12:00:00 AM
Abstract :
Focused laser etching has been investigated for use in limited area processing (LAP) of silicon wafers. The electrical properties of the etched material have been characterized for the first time by fabricating several different test structures, including isolation trenches, Schottky barrier diodes, and MOS trench capacitors. The etched material is suitable for many applications.<>
Keywords :
Schottky-barrier diodes; elemental semiconductors; etching; laser beam applications; metal-insulator-semiconductor structures; semiconductor technology; silicon; MOS trench capacitors; Schottky barrier diodes; Si wafers; electrical properties; focused laser etching; isolation trenches; limited area processing; semiconductor; test structures; Etching; Gas lasers; MOS capacitors; Optical materials; Power lasers; Schottky barriers; Schottky diodes; Silicon; Surface emitting lasers; Testing;
Journal_Title :
Electron Device Letters, IEEE
