Title :
On–Off Charge–Voltage Characteristics and Dopant Number Fluctuation Effects in Junctionless Double-Gate MOSFETs
Author :
Taur, Yuan ; Chen, Han-Ping ; Wang, Wei ; Lo, Shih-Hsien ; Wann, Clement
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
fDate :
3/1/2012 12:00:00 AM
Abstract :
Junctionless double-gate (DG) MOSFETs are assessed by analyzing the on-off characteristics of the mobile charge density as a function of gate voltage. Compared with undoped DG MOSFETs, junctionless MOSFETs have an inferior on-off charge performance with more degradation at higher doping. The results also indicate a major issue: dopant number fluctuations in minimum width junctionless MOSFETs. A first-order analytic expression shows that the one-sigma threshold fluctuation is proportional to the square root of doping concentration. Inclusion of the quantum effect makes no significant difference to the results.
Keywords :
MOSFET; semiconductor doping; dopant number fluctuation effects; doping concentration; first-order analytic expression; gate voltage function; junctionless double-gate MOSFET; mobile charge density; on-off charge-voltage characteristics; one-sigma threshold fluctuation; quantum effect; Doping; Logic gates; MOSFETs; Mobile communication; Neodymium; Silicon; Threshold voltage; Double-gate (DG) FET; MOSFET; junctionless MOSFET; semiconductor device modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2181392
