On–Off Charge–Voltage Characteristics and Dopant Number Fluctuation Effects in Junctionless Double-Gate MOSFETs

Author

Taur, Yuan ; Chen, Han-Ping ; Wang, Wei ; Lo, Shih-Hsien ; Wann, Clement

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA

Volume

59

Issue

3

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

863

Lastpage

866

Abstract

Junctionless double-gate (DG) MOSFETs are assessed by analyzing the on-off characteristics of the mobile charge density as a function of gate voltage. Compared with undoped DG MOSFETs, junctionless MOSFETs have an inferior on-off charge performance with more degradation at higher doping. The results also indicate a major issue: dopant number fluctuations in minimum width junctionless MOSFETs. A first-order analytic expression shows that the one-sigma threshold fluctuation is proportional to the square root of doping concentration. Inclusion of the quantum effect makes no significant difference to the results.

Keywords

MOSFET; semiconductor doping; dopant number fluctuation effects; doping concentration; first-order analytic expression; gate voltage function; junctionless double-gate MOSFET; mobile charge density; on-off charge-voltage characteristics; one-sigma threshold fluctuation; quantum effect; Doping; Logic gates; MOSFETs; Mobile communication; Neodymium; Silicon; Threshold voltage; Double-gate (DG) FET; MOSFET; junctionless MOSFET; semiconductor device modeling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2181392

Filename

6129497