DocumentCode :
1420518
Title :
Modeling and measurement of longitudinal gain dynamics in saturated semiconductor optical amplifiers of different length
Author :
Gutierrez-Castrejon, R. ; Schares, Laurent ; Occhi, Lorenzo ; Guekos, George
Author_Institution :
Inst. for Quantum Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland
Volume :
36
Issue :
12
fYear :
2000
Firstpage :
1476
Lastpage :
1484
Abstract :
A new frequency-domain wave-propagation model that includes a position- and time-dependent carrier lifetime and the effect of amplified spontaneous emission is introduced and used to accurately simulate recovery time experiments in 0.5- and 1.0-mm long semiconductor optical amplifiers. It is compared to a constant lifetime model at different saturation levels, showing better performance and consistency. The role of the amplified spontaneous emission in saturated amplifiers is also discussed.
Keywords :
carrier lifetime; gain measurement; laser beams; laser theory; laser variables measurement; optical saturation; ridge waveguides; semiconductor optical amplifiers; superradiance; waveguide lasers; 0.5 mm; 1 mm; amplified spontaneous emission; consistency; constant lifetime model; frequency-domain wave-propagation model; longitudinal gain dynamics; measurement; modeling; performance; position-dependent carrier lifetime; recovery time experiments; saturated amplifiers; saturated semiconductor optical amplifiers; saturation levels; semiconductor optical amplifiers; time-dependent carrier lifetime; Charge carrier lifetime; Gain measurement; Nonlinear optical devices; Nonlinear optics; Optical amplifiers; Optical devices; Optical wavelength conversion; Semiconductor optical amplifiers; Spontaneous emission; Stimulated emission;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.892569
Filename :
892569
Link To Document :
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