DocumentCode :
1420653
Title :
A CMOS Noise-Squeezing Amplifier
Author :
Lee, Wooram ; Afshari, Ehsan
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Volume :
60
Issue :
2
fYear :
2012
Firstpage :
329
Lastpage :
339
Abstract :
Noise squeezing occurs through phase-sensitive gain implemented by a parametric process in a nonlinear LC resonator. This process enhances the sensitivity for one quadrature component of an input signal at the expense of degrading the sensitivity for the other quadrature. We demonstrate an 8.75-GHz parametric resonant amplifier in a 0.13-μm CMOS process, which provides gain of 21 dB and 12 dB for the two quadrature components. This 9-dB gain difference results in a 2.5-dB sensitivity improvement for one quadrature, while it degrades the other quadrature sensitivity by 6.4 dB. The amplifier bandwidth is around 800 MHz and draws 36 mA from a 1.2-V supply.
Keywords :
CMOS analogue integrated circuits; amplifiers; resonators; CMOS noise-squeezing amplifier; current 36 mA; frequency 8.75 GHz; gain 12 dB; gain 21 dB; nonlinear LC resonator; parametric process; parametric resonant amplifier; phase-sensitive gain; quadrature component; quadrature sensitivity; size 0.13 micron; voltage 1.2 V; Capacitors; Dispersion; Gain; Noise; Power transmission lines; Resonant frequency; Sensitivity; CMOS; distributed system; low-noise amplifier; noise squeezing; nonlinear capacitor; parametric amplification; phase matching; phase-sensitive gain;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2011.2178318
Filename :
6129525
Link To Document :
بازگشت