Recent Progress in Thallium Bromide Gamma-Ray Spectrometer Development

Author

Kim, Hadong ; Kargar, Alireza ; Cirignano, Leonard ; Churilov, Alexei ; Ciampi, Guido ; Higgins, William ; Olschner, Fred ; Shah, Kanai

Author_Institution

RMD, Inc., Watertown, MA, USA

Volume

59

Issue

1

fYear

2012

Firstpage

243

Lastpage

248

Abstract

In recent years, progress in processing and crystal growth methods have led to a significant increase in the mobility-lifetime product of electrons in thallium bromide (TlBr). This has enabled single carrier collection devices with thickness greater than 1-cm to be fabricated. In this paper we report on our latest results from pixellated devices with depth correction as well as our initial results with Frisch collar devices. After applying depth corrections, energy resolution of approximately 2% (FWHM at 662 keV) was obtained from a 13-mm thick TlBr array operated at -18°C and under continuous bias and irradiation for more than one month. Energy resolution of 2.4% was obtained at room temperature with an 8.4-mm thick TlBr Frisch collar device.

Keywords

carrier lifetime; carrier mobility; crystal growth from solution; gamma-ray detection; gamma-ray spectrometers; gamma-ray spectroscopy; semiconductor counters; semiconductor growth; TlBr Frisch collar device; continuous bias; continuous irradiation; depth correction; electron mobility-lifetime product; pixellated devices; single carrier collection devices; temperature 255.15 K; temperature 293 K to 298 K; thallium bromide crystal growth methods; thallium bromide gamma-ray spectrometer; thallium bromide processing methods; Arrays; Cathodes; Crystals; Detectors; Energy resolution; Gamma rays; Radiation effects; Depth correction; TlBr; long-term stability; semiconductor detector;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2173503

Filename

6129530