DocumentCode
1420908
Title
Reducing airborne molecular contamination by efficient purging of FOUPs for 300-mm wafers-the influence of materials properties
Author
Frickinger, Jürgen ; Bügler, Jürgen ; Zielonka, Gerhard ; Pfitzner, Lothar ; Ryssel, Heiner ; Hollemann, Susanne ; Schneider, Heinz
Author_Institution
Fraunhofer-Inst. fur Integrierte Schaltungen, Erlangen, Germany
Volume
13
Issue
4
fYear
2000
fDate
11/1/2000 12:00:00 AM
Firstpage
427
Lastpage
433
Abstract
The control of airborne molecular contamination (AMC) plays an increasing role in semiconductor manufacturing processes. A method to reduce AMC is purging of wafer boxes with inert gas. In this study, data on the practicability and optimization of purging a front opening unified pod (FOUP), a wafer box for 300-mm wafers, are presented. Different parameters for the purge process are evaluated experimentally. Key values for the assessment of efficiency are the time-dependent content of oxygen and humidity in the FOUP. The increase in the key values after the purge was measured and the construction of the FOUP was modified in order to obtain sufficient tightness. Spatially resolved measurements reveal the homogeneity of the purge. Experimental data are compared to data obtained by a simulation using a computational fluid dynamics program. Values for oxygen are in agreement with the calculated curves. In contrast to this, an additional, long-lasting contribution that was not taken into account in the simulations makes depletion of humidity slower than expected. This contribution is explained with the desorption and permeation of humidity through the plastic walls of the FOUP. The presence of both effects, desorption and permeation, is proved and quantified. Materials properties turn out to heavily affect purge effectiveness and the postpurge ingress of certain contaminants in a wafer box
Keywords
circuit optimisation; clean rooms; computational fluid dynamics; desorption; humidity; oxygen; semiconductor process modelling; 300 mm; 300-mm wafers; FOUP; O2; O2 content; Si; airborne molecular contamination; computational fluid dynamics; desorption; front opening unified pod; homogeneity; humidity; materials properties; optimization; permeation of humidity; postpurge ingress; purge effectiveness; purging; semiconductor manufacturing processes; spatially resolved measurements; time-dependence; Computational fluid dynamics; Computational modeling; Contamination; Helium; Humidity; Manufacturing processes; Material properties; Plastics; Pollution measurement; Spatial resolution;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/66.892628
Filename
892628
Link To Document