• DocumentCode
    1420908
  • Title

    Reducing airborne molecular contamination by efficient purging of FOUPs for 300-mm wafers-the influence of materials properties

  • Author

    Frickinger, Jürgen ; Bügler, Jürgen ; Zielonka, Gerhard ; Pfitzner, Lothar ; Ryssel, Heiner ; Hollemann, Susanne ; Schneider, Heinz

  • Author_Institution
    Fraunhofer-Inst. fur Integrierte Schaltungen, Erlangen, Germany
  • Volume
    13
  • Issue
    4
  • fYear
    2000
  • fDate
    11/1/2000 12:00:00 AM
  • Firstpage
    427
  • Lastpage
    433
  • Abstract
    The control of airborne molecular contamination (AMC) plays an increasing role in semiconductor manufacturing processes. A method to reduce AMC is purging of wafer boxes with inert gas. In this study, data on the practicability and optimization of purging a front opening unified pod (FOUP), a wafer box for 300-mm wafers, are presented. Different parameters for the purge process are evaluated experimentally. Key values for the assessment of efficiency are the time-dependent content of oxygen and humidity in the FOUP. The increase in the key values after the purge was measured and the construction of the FOUP was modified in order to obtain sufficient tightness. Spatially resolved measurements reveal the homogeneity of the purge. Experimental data are compared to data obtained by a simulation using a computational fluid dynamics program. Values for oxygen are in agreement with the calculated curves. In contrast to this, an additional, long-lasting contribution that was not taken into account in the simulations makes depletion of humidity slower than expected. This contribution is explained with the desorption and permeation of humidity through the plastic walls of the FOUP. The presence of both effects, desorption and permeation, is proved and quantified. Materials properties turn out to heavily affect purge effectiveness and the postpurge ingress of certain contaminants in a wafer box
  • Keywords
    circuit optimisation; clean rooms; computational fluid dynamics; desorption; humidity; oxygen; semiconductor process modelling; 300 mm; 300-mm wafers; FOUP; O2; O2 content; Si; airborne molecular contamination; computational fluid dynamics; desorption; front opening unified pod; homogeneity; humidity; materials properties; optimization; permeation of humidity; postpurge ingress; purge effectiveness; purging; semiconductor manufacturing processes; spatially resolved measurements; time-dependence; Computational fluid dynamics; Computational modeling; Contamination; Helium; Humidity; Manufacturing processes; Material properties; Plastics; Pollution measurement; Spatial resolution;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.892628
  • Filename
    892628