DocumentCode
1420927
Title
Novel Antiphase-Coupled RTD Microwave Oscillator Operating at Extremely Low DC-Power Consumption
Author
Jeong, Yongsik ; Choi, Sunkyu ; Yang, Kyounghoon
Author_Institution
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Volume
9
Issue
3
fYear
2010
fDate
5/1/2010 12:00:00 AM
Firstpage
338
Lastpage
341
Abstract
A new resonant tunneling diode (RTD) microwave oscillator operating at extremely low dc-power consumption is proposed, which utilizes the antiphase-coupled quantum-effect RTD oscillations for efficient ac-power generation at a summing node of output based on a push-push principle. The fabricated integrated circuit of the RTD microwave oscillator by using an InP-based RTD/HBT quantum-effect IC technology shows an extremely low total dc-power consumption of 85 ??W at an oscillation frequency of 29.1 GHz. In order to achieve the extremely low dc-power consumption, the device size of RTD has been scaled down to 0.7 ?? 0.7 ??m2. The obtained total dc-power consumption of 85 ??W at an applied bias of 0.49 V is found to be the lowest reported up to date, corresponding to about 1/170 of that in the conventional-type low-power oscillators in the related frequency range.
Keywords
AC generators; III-V semiconductors; MMIC oscillators; bipolar MMIC; heterojunction bipolar transistors; indium compounds; power consumption; resonant tunnelling diodes; InP; InP-based RTD-HBT quantum-effect IC technology; ac-power generation; antiphase-coupled quantum-effect RTD oscillations; device size; extremely low dc-power consumption; frequency 29.1 GHz; integrated circuit; oscillation frequency; power 85 muW; push-push principle; resonant tunneling diode microwave oscillator; summing node; voltage 0.49 V; Antiphase-coupled oscillation; low power; microwave oscillator; resonant tunneling diode (RTD);
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2010.2043537
Filename
5416319
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