Derivation of a nonlinear variance equation and its application to SOI technology

Author

Rowlands, David ; Dimitrijev, Sima

Author_Institution

Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia

Volume

13

Issue

4

fYear

2000

fDate

11/1/2000 12:00:00 AM

Firstpage

492

Lastpage

496

Abstract

An analytic nonlinear equation for variance was derived along with a method based on response surface mapping techniques to calculate the variance using the proposed equation. The technique was applied to the threshold voltage of a 0.1-μm silicon-on-insulator MOS device, and the variance value obtained was verified using Monte Carlo simulation. The threshold voltage dependence upon active-layer thickness was found to be highly nonlinear due to the device´s going from the fully depleted to the partially depleted regime. Analysis of the variance showed that the effect of the nonlinear terms (18.7%) is more important than the effect of the mixed term (-0.7%) and almost as important as the contribution of the second most dominant input-process parameter (23.6%). This illustrates the importance of the proposed nonlinear equation

Keywords

Monte Carlo methods; nonlinear differential equations; semiconductor process modelling; silicon-on-insulator; 0.1 mum; 0.1-μm SOI device; MOS device; Monte Carlo simulation; SOI technology; Si; active-layer thickness; analytic nonlinear equation; input-process parameter; nonlinear variance equation; partially depleted regime; process fluctuation; response surface mapping; threshold voltage; threshold voltage dependence; Analysis of variance; Analytical models; Fluctuations; Input variables; Manufacturing processes; Monitoring; Nonlinear equations; Silicon on insulator technology; Taylor series; Threshold voltage;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.892635

Filename

892635