Growth of Ga $_{bm 2}$ O $_{bm 3}$ Nanowires and the Fabrication of Solar-Blind Photodetector

The authors report the growth of nanowires by heating the GaN/sapphire template. It was found that density, average length, and average diameter of the nanowires all increased as we increased the grown temperature. It was also found that β-Ga₂O ₃ nanowires with good crystal quality could be achieved only at high temperatures (i.e., 1050 and 1100 °C). Solar-blind β-Ga₂O ₃ nanowire photodetector was also fabricated by depositing interdigitated contact electrodes. With an incident light wavelength of 255 nm and an applied bias of 5 V, it was found that measured responsivity of the photodetector was 3.72×10^-1 mA/W.