DocumentCode :
1421750
Title :
On the interplay between meshing and discretization in three-dimensional diffusion simulation
Author :
Kosik, Robert ; Fleischmann, Peter ; Haindl, Bernhard ; Pietra, Paola ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Austria
Volume :
19
Issue :
11
fYear :
2000
fDate :
11/1/2000 12:00:00 AM
Firstpage :
1233
Lastpage :
1240
Abstract :
The maximum principle is the most important property of solutions to diffusion equations. Violation of the maximum principle by the applied discretization scheme is the cause for severe numerical instabilities: the emergence of negative concentrations and, in the nonlinear case, the deterioration of the convergence of the Newton iteration. We compare finite volumes (FV) and finite elements (FE) in three dimensions with respect to the constraints they impose on the mesh to achieve a discrete maximum principle. Distinctive mesh examples and simulations are presented to clarify the mutual relationship of the resulting constraints: Delaunay meshes guarantee a maximum principle for FV, while the recently introduced dihedral angle criterion is the natural constraint for FE. By constructing a mesh which fulfills the dihedral angle criterion but is not Delaunay we illustrate the different scope of both criteria. Due to the lack of meshing strategies tuned for the dihedral angle criterion we argue for the use of FV schemes in three-dimensional diffusion modeling
Keywords :
Newton method; circuit simulation; diffusion; doping profiles; integrated circuit modelling; mesh generation; semiconductor process modelling; Delaunay meshes; Newton iteration; diffusion equations; dihedral angle criterion; discrete maximum principle; discretization; finite elements; finite volumes; maximum principle; meshing; natural constraint; negative concentrations; numerical instabilities; three-dimensional diffusion simulation; Circuit simulation; Convergence of numerical methods; Costs; Finite element methods; Mathematics; Microelectronics; Nonlinear equations; Regions; Semiconductor impurities; Semiconductor process modeling;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.892848
Filename :
892848
Link To Document :
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