Polarization-dependent refractive-index change induced by superlattice disordering

Author

Suzuki, Yasuhiro ; Iwamura, Hidetoshi ; Miyazawa, Takeo ; Wakatsuki, Atsushi ; Mikami, Osamu

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

32

Issue

11

fYear

1996

fDate

11/1/1996 12:00:00 AM

Firstpage

1922

Lastpage

1931

Abstract

A model of the polarization-dependent refractive-index change that accompanies superlattice disordering is proposed for the first time. Calculated results agree well with experimental results in terms of the amount and direction of the refractive-index changes. In the GaAs-AlAs system, a simple diffusion model that considers the diffusion of group III atoms explains the experimental results. In a InGaAs-InP system, it is assumed that group V atoms mainly induce disordering, and the difference between the diffusion constant in wells and that in barriers is taken into account. The refractive-index changes induced by superlattice disordering are useful for fabricating polarization control devices and integrated optical circuits

Keywords

III-V semiconductors; aluminium compounds; diffusion; gallium arsenide; indium compounds; integrated optics; light polarisation; refractive index; semiconductor device models; semiconductor superlattices; GaAs-AlAs; GaAs-AlAs system; InGaAs-InP; InGaAs-InP system; diffusion constant; disordering; group III atoms; integrated optical circuits; polarization control devices; polarization-dependent refractive-index change; refractive-index changes; simple diffusion model; superlattice disordering; Communication system control; Impurities; Optical refraction; Optical superlattices; Optical variables control; Optical waveguides; Photonic band gap; Polarization; Rapid thermal annealing; Rapid thermal processing;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.541678

Filename

541678