Recent advances in the molecular beam epitaxy of the wide-bandgap semiconductor ZnSe and its superlattices

Properties of the wide-bandgap semiconductor ZnSe (2.7 eV) and ZnSe-based superlattices grown by molecular-beam epitaxy are reviewed. The growth and material characterization of ZnSe, grown on a variety of both lattice-matched and -mismatched substrates, is described ZnS, ZnTe, Sn(S,Se), the magnetic semiconductor MnSe, and the dilute magnetic semiconductor Zn_1-xMn_xSe have been layered with ZnSe to form a number of superlattice and multiple quantum well structures. The quantum size structures have provided for studies of interesting physical phenomena including polarized stimulated emission, exciton trapping, nonlinear exciton effects, biexciton formation, frustrated magnetic ordering, and wide visible wavelength tunability