Ultraviolet Electroluminescence From ZnO-Based n-i-p Light-Emitting Diodes

Author

Lee, Ching-Ting ; Yan, Jheng-Tai

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

23

Issue

6

fYear

2011

fDate

3/15/2011 12:00:00 AM

Firstpage

353

Lastpage

355

Abstract

The p-type ZnO films were obtained using codeposition of ZnO and sources by the vapor cooling condensation system. With an adequate postannealing temperature, the p-type conductive behaviors of the resulting ZnO films could be achieved due to the activation of Li-N dual acceptor. According to the emission energy of free electron to acceptor hole level, the acceptor binding energy of 137 meV was obtained. Furthermore, the ZnO-based n-i-p ultraviolet light-emitting diodes were deposited on sapphire substrates using the vapor cooling condensation system. A rectifying diode-like behavior and ultraviolet emission were observed from the ZnO-based n-i-p light-emitting diodes.

Keywords

II-VI semiconductors; condensation; electroluminescence; light emitting diodes; lithium compounds; sapphire; ultraviolet spectra; zinc compounds; Li-N; ZnO; acceptor binding energy; acceptor hole level; electron volt energy 137 meV; emission energy; n-i-p light emitting diodes; postannealing; ultraviolet electroluminescence; vapor cooling condensation system; Li-N dual acceptor; ZnO-based light-emitting diodes; p-type ZnO film; vapor cooling condensation system;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2011.2104945

Filename

5682388