High temperature performance of three-quantum-well vertical-cavity top-emitting lasers

Author

Tu, L.W. ; Wang, Y.H. ; Schubert, E.F. ; Weir, B.E. ; Zydzik, G.J. ; Cho, A.Y.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

27

Issue

5

fYear

1991

Firstpage

457

Lastpage

458

Abstract

Vertical-cavity top-emitting quantum well lasers are grown by molecular beam epitaxy. The active region consists of three 100 AA GaAs quantum wells separated by 80 AA Al_0.3Ga_0.7As barriers. Continuous wave lasing by current injection is maintained at temperatures up to 80 degrees C. At room temperature, light output power more than 1 mW is obtained, and threshold currents are as low as 2.0 mA for 10 mu m devices. External differential quantum efficiencies are 50% averaged up to 0.4 mW. The single longitudinal and transverse modes are preserved up to approximately 0.8 mW. The temperature dependence of the threshold current gives T₀ as high as 330 degrees C.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor junction lasers; semiconductor quantum wells; 10 micron; 100 AA; 2.0 mA; 22 to 80 degC; 330 degC; 80 AA; CW lasing; GaAs-AlGaAs; III-V semiconductors; active region; current injection; external differential quantum efficiency; light output power; longitudinal mode; molecular beam epitaxy; three-quantum-well vertical-cavity top-emitting lasers; threshold currents; transverse modes;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19910288

Filename

64323