High temperature performance of three-quantum-well vertical-cavity top-emitting lasers

Vertical-cavity top-emitting quantum well lasers are grown by molecular beam epitaxy. The active region consists of three 100 AA GaAs quantum wells separated by 80 AA Al_0.3Ga_0.7As barriers. Continuous wave lasing by current injection is maintained at temperatures up to 80 degrees C. At room temperature, light output power more than 1 mW is obtained, and threshold currents are as low as 2.0 mA for 10 mu m devices. External differential quantum efficiencies are 50% averaged up to 0.4 mW. The single longitudinal and transverse modes are preserved up to approximately 0.8 mW. The temperature dependence of the threshold current gives T₀ as high as 330 degrees C.