• DocumentCode
    1422620
  • Title

    Distribution functions of positive ions and electrons in a plasma near a surface

  • Author

    Wei, Peng-Sheng ; Yeh, Feng-Bin ; Ho, Ching-Yen

  • Author_Institution
    Dept. of Mech. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
  • Volume
    28
  • Issue
    4
  • fYear
    2000
  • fDate
    8/1/2000 12:00:00 AM
  • Firstpage
    1244
  • Lastpage
    1253
  • Abstract
    In this study, the velocity distribution functions of the ions and electrons in a collisional presheath and collisionless sheath of a plasma near a wall emitting and reflecting ions and electrons are systematically determined. The collisions in the presheath are modeled by a relaxation time approximation (namely, Bhatnagar-Gross-Krook model, or simply BGK model). To find the variation in electrostatic potential with position, the model and analysis from Emmert et al. (1980), are used. Distribution functions of the ions and electrons in a collisionless presheath and sheath on a wall partially reflecting ions and electrons, therefore, can be exactly obtained. The reflections of the ions and electrons by a wall play important roles in studying heat transfer from a plasma sheath to a workpiece surface, and sputter etching and deposition, ion implantation, and ion scattering spectroscopy. Irrespective of ion and electron reflectivities, velocities of the ions in the presheath and sheath are of highly non-Maxwell-Boltzmann distributions. The electrons in the presheath are close to Maxwell-Boltzmann distributions, whereas those in the sheath are non-Maxwell-Boltzmann distributions. Even though the wall partially reflects ions and electrons, the Bohm´s criterion is marginally satisfied at the sheath edge. The computed distribution functions for a completely absorbing surface agree with theoretical results provided in the literature. Good comparison of the resulted transport variables with available analytical work is presented in the companion paper
  • Keywords
    ion implantation; ion-surface impact; plasma sheaths; plasma transport processes; plasma-wall interactions; reflection; sputter deposition; sputter etching; Bhatnagar-Gross-Krook model; Bohm´s criterion; Maxwell-Boltzmann distributions; collisional presheath; collisionless presheath; collisionless sheath; electron reflectivity; electrons; electrostatic potential; emission; ion implantation; ion reflectivity; ion scattering; nonMaxwell-Boltzmann distributions; plasma; plasma sheath; positive ions; presheath; reflection; relaxation time approximation; sheath; sputter deposition; sputter etching; surface; velocity distribution functions; wall; workpiece surface; Distribution functions; Electron emission; Electrostatic analysis; Heat transfer; Ion implantation; Plasma applications; Plasma immersion ion implantation; Plasma sheaths; Reflection; Sputter etching;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/27.893313
  • Filename
    893313